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 N-Channel Enhancement-Mode MOS Transistor
CORPORATION
2N7002
DESCRIPTION Calogic's 2N7002 device type is a vertical DMOS FET transistor housed in a surface mount SOT-23 for micro-assembly applications. The device is an excellent choice for switching applications where breakdown (BV) and low on-resistance are important. ORDERING INFORMATION Part 2N7002 X2N7002 Package Plastic SOT-23 Package Sorted Chips in Carriers Temperature Range -55oC to +150oC -55oC to +150oC
PIN CONFIGURATION
1 2 1 DRAIN 2 SOURCE 3 GATE 1 3 3 TOP VIEW 2
S G
SOT-23 D
CD5
PRODUCT SUMMARY
V(BR)DSS (V) 60
rDS(ON) () 7.5
ID (A) 0.115
PRODUCT MARKING 2N7002 V02
9-3
2N7002
CORPORATION
ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified)
SYMBOL VDS VGS ID IDM PD TJ Tstg TL PARAMETERS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Operating Junction Temperature Range Storage Temperature Range Lead Temperature (1/16" from case for 10 sec.)
1
LIMITS 60 40 0.115 0.073 0.8 200 80 -55 to 150 -55 to 150 300
UNITS V
TEST CONDITIONS
TA = 25oC A TA = 100 oC TA = 25oC TA = 100 oC
mW
o
C
THERMAL RESISTANCE RATINGS
SYMBOL RthJA NOTE: THERMAL RESISTANCE Junction-to-Ambient LIMITS 625 UNITS K/W
1. Pulse width limited by maximum junction temperature.
SPECIFICATIONS1
SYMBOL STATIC V(BR)DSS VGS(th) IGSS IDSS ID(ON) Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current
3
PARAMETER
MIN 60 1
TYP2 70 1.9
MAX
UNIT
TEST CONDITIONS ID = 10A, VGS = 0V VDS = VGS, I D = 0.25mA VGS = 20V, VDS = 0V VDS = 60V, VGS = 0V TC = 125oC VDS = 2VDS(ON), VGS = 10V VGS = 5V, I D = 50mA TC = 125oC VGS = 10V, ID = 0.5A TC = 125oC VGS = 5V, I D = 50mA
2.5 100 1 500
V nA A mA
500
1000 5 7.5 13.5 7.5 13.5 0.375 3.75 6.75 9 2.5 4.4 0.25
rDS(ON)
Drain-Source On-Resistance3
VDS(ON) gFS gOS DYNAMIC C iss Coss Crss SWITCHING t ON t OFF NOTES: 1. 2. 3. 4.
Drain-Source On-Voltage3 Forward Transconductance3 Common Source Output Conductance3, 4 Input Capacitance Output Capacitance
4
1.25 2.2 80 170 500 16 11 2
V mS S
VGS = 10V, ID = 0.5A TC = 125oC4 VDS = 10V, ID = 0.2A VDS = 5V, ID = 50mA
50 25 5 pF VDS = 25V, VGS = 0V, f = 1MHz
Reverse Transfer Capacitance
Turn-On Time Turn-Off Time TA = 25oC unless otherwise specified. For design aid only, not subject to production testing. Pulse test; PW = 80S, duty cycle 1%. This parameter not registered with JEDEC.
7 7
20 nS 20
VDD = 30V, RL = 150, ID = 0.2A VGEN = 10V, RG = 25 (Switching time is essentially independent of operating temperature)
9-4


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